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Photoshop cc crack macAs a method for manufacturing a nitride semiconductor on a commercial scale, there is a method disclosed in Japanese Patent No. 5536088, for example. In this method, a silicon substrate and a sapphire substrate (or a silicon substrate) are joined together, and a nitride semiconductor layer is epitaxially grown thereon to form a nitride semiconductor layer substrate. This nitride semiconductor layer substrate is then cleaved, thereby obtaining a nitride semiconductor wafer. Furthermore, in order to form a so-called super laminated substrate having a plurality of nitride semiconductor layer wafers laminated one on another, the nitride semiconductor layer substrate is cleaved in a state in which one nitride semiconductor layer wafer is located on each of the upper and lower surfaces of the other nitride semiconductor layer wafer.
As such a method, a method has been suggested which causes laser light to be incident on one side of the super laminated substrate such that the radiation light transmits through one nitride semiconductor layer wafer and is reflected by the other nitride semiconductor layer wafer.
Furthermore, there is a method, for example, for causing laser light to be incident on one side of the super laminated substrate such that the radiation light transmits through each nitride semiconductor layer wafer and is reflected by the other nitride semiconductor layer wafer.
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