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Category:Windows security softwareThis invention relates to the simultaneous manufacture of an integrated circuit wafer, typically silicon, having a plurality of layers of silicon and silicon dioxide, and a method of using the wafer to test semiconductor processing equipment. In particular, the invention relates to a method of using the wafer to achieve temperature uniformity on a number of substrates simultaneously, to assure that the temperature uniformity in one substrate is maintained in the other substrates, and to monitor the temperature uniformity during processing.
Semiconductor processing equipment with process chambers is manufactured by numerous vendors. Because various vendors use different processes, equipment vendors expend great time and effort to design their equipment with a particular process in mind. In order to mitigate this problem, a number of well known cross process verification methods (CPV) have been developed. For example, the „Thermal Plate Test“ cross process verification method is a method of comparing the uniformity of temperature on a silicon wafer during processing on different processes on the same equipment, i.e., on a process chamber. The process chamber is monitored for time, temperature, and uniformity of temperature. A wafer is placed on the temperature plate of the chamber for the time period. The chamber is then transferred to a different process chamber for processing the wafer in that process. When the wafer is removed from the temperature plate, the temperature uniformity of the wafer is measured. The difference in temperature uniformity between the two processes is attributed to the temperature uniformity of the process chamber. If there is a large temperature difference, the process chamber design is modified to achieve better uniformity.
The process chamber in a thermal plate test has a temperature plate, an infrared sensor for measuring the temperature of the wafer, and a vacuum lock-out device that isolates the chamber. The process chamber is monitored from a remote, position, either inside a test chamber or on the process chamber itself, using a fiber optic cable. The temperature plate and infrared sensor are monitored simultaneously, when the temperature plate is in contact with the wafer. The wafer is placed onto the temperature plate and the temperature uniformity of the wafer is monitored as the chamber is stepped to a second process chamber. Because the process chamber is isolated between the steps of the temperature plate test, the atmosphere can be changed between the two steps of the test.
In one form of process chamber, a combination of a temperature plate and infrared sensor is not commercially available. Commercially available process chambers with the
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